Scanning Tunneling Microscopy(STM). Application for Physics. MetalSemiconductor Interface.

PHI: Physics Application Programming Interface

In this paper, we propose to design an easy to use physics application programming interface (PHI) with support for pluggable physics library. The goal is to create physically realistic 3D graphics environments and integrate real-time physics simulation into games seamlessly with advanced features, such as interactive character simulation and vehicle dynamics. The actual implementation of the s...

Scanning tunneling microscopy of interface properties of Bi2Se3 on FeSe.

We investigate the heteroepitaxial growth of Bi(2)Se(3) films on FeSe substrates by low-temperature scanning tunneling microscopy/spectroscopy. The growth of Bi(2)Se(3) on FeSe proceeds via van der Waals epitaxy with atomically flat morphology. A striped moiré pattern originating from the lattice mismatch between Bi(2)Se(3) and FeSe is observed. Tunneling spectra reveal the spatially inhomogene...

In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface

The great reactivity o f semiconductor surfaces and the easy formation o f oxide layers make in-situ STM imaging o f tlie semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging o f such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system SiINaOH to illustrate the latest advances concern...

Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry

Scanning tunneling microscopy and spectroscopy is used to characterize InAs/GaSb superlattices, grown by molecular-beam epitaxy. Roughness at the interfaces between lnAs and GaSh layers is directly observed in the images, and a quantitative spectrum of this roughness is obtained. Electron subbands in the InAs layers are resolved in spectroscopy. Asymmetry between the interfaces of InAs grown on...

Microscopy, Scanning Tunneling